Patent · US Active

Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient

US8815392B2 · kind B2 · utility

0Cited by

18References

16Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Ulrich Kretzer · Chemnitz, DE
Frank Börner · Dresden, DE
Stefan Eichler · Dresden, DE
Frieder Kropfgans · Freiberg, DE

Key dates

Filing date	Nov 8, 2012
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Nov 8, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/2982
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm−3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.