Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknesses
US8815673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | May 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.