Methods of manufacturing semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein
US8815687B2 · kind B2 · utility
2Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2013 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Oct 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of manufacturing semiconductor devices. The method of manufacturing the semiconductor device may include forming a transistor on a substrate, the transistor having first and second doped regions, forming an interlayer dielectric on the substrate, forming a contact hole exposing the first doped region of the transistor, forming a spacer disposed on an inner sidewall of the contact hole, and filling the contact hole provided with the spacer with a conductive layer to form a contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.