FinFET device formation

US8815693B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Emre Alptekin · Fishkill, US
• Ravikumar Ramachandran · Beacon, US
• Viraj Y. Sardesai · Poughkeepsie, US
• Reinaldo Vega · Mahopac, US

Key dates

• Filing date: Jan 23, 2013
• Grant date: Aug 26, 2014
• Expiry date: Jan 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method includes patterning a fin on a semiconductor substrate, depositing a local trench isolation (LTI) layer on the semiconductor substrate, patterning a gate stack over a channel region of the fin and over a portion of the LTI layer, depositing a first capping layer over exposed portions of the LTI layer, performing an etching process to remove oxide material from exposed portions of the fin, and epitaxially growing a semiconductor material from exposed portions of the fin to define active regions.