Method for epitaxial re-growth of semiconductor region
US8815712B2 · kind B2 · utility
442Cited by
14References
20Claims
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Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Aug 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.