Method of etching a workpiece
US8815720B2 · kind B2 · utility
99Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.