Semiconductor device having metal alloy gate and method for manufacturing the same
US8815728B2 · kind B2 · utility
3Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.