Reducing damage to low-K materials during photoresist stripping
US8815745B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2009 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming features in a porous low-k dielectric layer disposed below a patterned organic mask is provided. Features are etched into the porous low-k dielectric layer through the patterned organic mask, and then the patterned organic mask is stripped. The stripping of the patterned organic mask includes providing a stripping gas comprising COS, forming a plasma from the stripping gas, and stopping the stripping gas. A cap layer may be provided between the porous low-k dielectric layer and the patterned organic mask. The stripping of the patterned organic mask leaves the cap layer on the porous low-k dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.