Semiconductor device
US8816312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/75
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.