Semiconductor device and manufacturing method thereof

US8816326B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huaxiang Yin · Beijing, CN
• Jun Luo · Chongqing, CN
• Chao Zhao · Thuwal, SA
• Honggang Liu · Beijing, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Nov 25, 2011
• Grant date: Aug 26, 2014
• Expiry date: Aug 18, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938

Abstract

A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region.