Semiconductor device
US8816355B2 · kind B2 · utility
4Cited by
6References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jan 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an n++ cathode layer, an n− drift layer on the n++ cathode layer, a pair of p+ regions, an n+ channel region formed between the n− drift layer and the p+ region and sandwiched between the pair of p+ regions, n++ anode regions and an anode electrode formed on the n++ anode regions and the p+ regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.