Plasmonic nanostructures for organic image sensors

US8816358B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Shu-Ju Tsai · Tainan, TW
• Yeur-Luen Tu · Taichung, TW
• Cheng-Ta Wu · Dingshanjiao, TW
• Cheng-Yuan Tsai · Taipei, TW
• Chia-Shiung Tsai · Jinshanmian, TW
• Xiaomeng Chen · Hsinchu, TW

Key dates

• Filing date: Jul 3, 2013
• Grant date: Aug 26, 2014
• Expiry date: Jul 3, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

Some embodiments of the present disclosure relate to an optical sensor. The optical sensor includes a first electrode disposed over a semiconductor substrate. A photoelectrical conversion element, which includes a p-type layer and an n-type layer, is arranged over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal. A second electrode is disposed over the photoelectrical conversion element. The second electrode is transparent in the predetermined wavelength range. A color filter element, which is made up of plasmonic nanostructures, is disposed over the second electrode.