Gate structure of semiconductor device
US8816439B2 · kind B2 · utility
2Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jul 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
Abstract
A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.