Patent · US Active

Gate depletion drain extended MOS transistor

US8816441B2 · kind B2 · utility

0Cited by

0References

4Claims

0Family size

Assignee

CAMBRIDGE SILICON RADIO LIMITED · GB

Inventors

Rainer Herberholz · Cambridge, GB
Ludovic Oddoart · Le Rouret, FR
David Vigar · Singapore, SG

Key dates

Filing date	Apr 14, 2011
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Jun 25, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A drain extended MOS transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.