Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
US8816446B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.