Image sensor having wave guide and method for manufacturing the same
US8816459B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jan 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.