Capacitor structure

US8816474B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andre Hanke · Mülheim an der Ruhr, DE
• Oliver Nagy · Wien, AT

Key dates

• Filing date: Aug 7, 2008
• Grant date: Aug 26, 2014
• Expiry date: Aug 7, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One or more embodiments relate to a semiconductor device, comprising: a substrate; and a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together, each of the second conductive vias passing through the substrate, the second conductive vias spacedly disposed from the first conductive vias.