Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression
US8816567B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a second conductive layer of electrodes. A piezoelectric layer including a piezoelectric material is disposed between the first conductive layer and the second conductive layer. One or more trenches can be formed in the piezoelectric layer on one or both sides in space regions between the electrodes. In some implementations, a process for forming the resonator structure includes removing an exposed portion of the piezoelectric layer to define a trench, for instance, by partial etching or performing an isotropic release etch using a XeF2 gas or SF6 plasma. In some other implementations, a portion of a sacrificial layer is removed to define a trench in the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.