Image sensor with fixed potential output transistor
US8817154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.