Thin film stack with surface-conditioning buffer layers and related methods
US8817358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 15, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/001
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.