Unipolar memory devices
US8817522B2 · kind B2 · utility
11Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Oct 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Electronic apparatus, systems, and methods can include a resistive memory cell having a dielectric structured as an operably variable resistance region between an oxygen source and an oxygen sink. The dielectric, oxygen source, and an oxygen sink can be structured as a field driven unipolar memory element with respect to generation and healing of a filament in the dielectric. Additional apparatus, systems, and methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.