Device comprising a plurality of static random access memory cells and method of operation thereof
US8817528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method comprises writing data to one or more static random access memory (SRAM) cells. Writing data to the one or more SRAM cells comprises applying a first data signal to at least one bit line electrically connected to the one or more SRAM memory cells, electrically disconnecting at least one of a first power supply terminal and a second power supply terminal of each of the one or more SRAM cells from a power supply and applying a word line signal to a word line electrically connected to the one or more SRAM cells. Thereafter, the at least one of the first power supply terminal and the second power supply terminal of each of the one or more SRAM cells is electrically connected to the power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.