Devices having bias temperature instability compensation
US8817570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 3, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods are provided for operating a memory device. An exemplary method involves obtaining a standby current through a memory block and adjusting a supply voltage for the memory block based on the obtained standby current. An exemplary memory device includes a block of one or more memory cells, a voltage regulating element coupled to the block to provide a supply voltage to the block, a current sensing element coupled to the block to measure current through the block, and a control module coupled to the voltage regulating element and the current sensing element to adjust the supply voltage provided by the voltage regulating element based on a measured current through the block obtained from the current sensing element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.