Temperature controlled lid assembly for tungsten nitride deposition

US8821637B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Avgerinos V. Gelatos · Scotts Valley, US
• Sang-Hyeob Lee · Fremont, US
• Xiaoxiong Yuan · Cupertino, US
• Salvador P. Umotoy · Pittsburg, US
• Yu Chang · San Jose, US
• Gwo-Chuan Tzu · Sunnyvale, US
• Emily Renuart · Santa Clara, US
• Jing-Chie Lin · Mountain View, US
• Wing-Cheong Gilbert Lai · Boise, US
• Sang Q. Le · San Jose, US

Key dates

• Filing date: Jan 29, 2008
• Grant date: Sep 2, 2014
• Expiry date: Nov 11, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45523
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.