Methods of directed self-assembly and layered structures formed therefrom
US8821978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Sep 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.