Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device
US8822129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition containing (A) a resin that contains a repeating unit having a partial structure represented by the specific formula and can decrease the solubility for a developer containing an organic solvent by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an electron beam or an extreme ultraviolet ray, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.