Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
US8822263B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.