Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

US8822306B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rudolf Berger · Munich, DE
• Hermann Gruber · Leverkusen, DE
• Wolfgang Lehnert · Lintach, DE
• Guenther Ruhl · Regensburg, DE
• Raimund Foerg · Straubing, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Karsten Kellermann · Altdorf, DE
• Michael Sommer · Raubling, DE
• Christian Rottmair · Erlangen, DE
• Roland Rupp · Achern, DE

Key dates

• Filing date: Aug 9, 2011
• Grant date: Sep 2, 2014
• Expiry date: Feb 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.