Method of growing epitaxial layers on a substrate

US8822314B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Christopher L. Chua · San Jose, US
• Mark R. Teepe · Menlo Park, US
• Thomas Wunderer · Palo Alto, US
• Zhihong Yang · San Jose, US
• Noble M. Johnson · Menlo Park, US
• Clifford F. Knollenberg · San Bruno, US

Key dates

• Filing date: Jun 14, 2012
• Grant date: Sep 2, 2014
• Expiry date: Sep 22, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02661
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.