Anchored damascene structures
US8822331B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relatively higher density portion and a relatively lower density portion, the relatively lower density portion forming a contiguous major portion of the dielectric layer; and, wherein the opening in the relatively lower density portion has a lateral dimension relatively larger compared to the relatively higher density portion to form anchoring steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.