Semiconductor device with air gap and method for fabricating the same
US8822335B2 · kind B2 · utility
8Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76847
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.