Patent · US Active

Optoelectric semiconductor chip

US8823034B2 · kind B2 · utility

3Cited by

1References

5Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Patrick Rode · Regensburg, DE
Martin Straβburg · Donaustauf, DE

Key dates

Filing date	Sep 26, 2011
Grant date	Sep 2, 2014
Priority date	—
Expiry date	Sep 26, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8516
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack consisting of a nitride compound semiconductor material on a carrier substrate, wherein the carrier substrate includes a surface containing silicon. The semiconductor layer stack includes a recess extending from a back of the semiconductor layer stack through an active layer to a layer of a first conductivity type. The layer of the first conductivity type connects electrically to a first electrical connection layer which covers at least a portion of the back through the recess. The layer of a second conductivity type connects electrically to a second electrical connection layer arranged at the back.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.