Method for producing semiconductor device and semiconductor device
US8823066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2014 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
Abstract
A method for producing a semiconductor device includes a step of forming a first insulating film around a fin-shaped silicon layer and forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer; a step of implanting an impurity into upper portions of the pillar-shaped silicon layer and fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer to form diffusion layers; and a step of forming a polysilicon gate electrode, a polysilicon gate line, and a polysilicon gate pad. The polysilicon gate electrode and the polysilicon gate pad have a larger width than the polysilicon gate line. After these steps follow a step of depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and the polysilicon gate line, and depositing a metal layer to form a metal gate electrode and a metal gate line, and a step of forming a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.