Semiconductor device and method for manufacturing same
US8823079B2 · kind B2 · utility
1Cited by
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19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 13, 2013 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.