Device with a strained Fin

US8823102B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Mark van Dal · Linden, BE
• Gerben Doornbos · Kessel-Lo, BE

Key dates

• Filing date: Nov 16, 2012
• Grant date: Sep 2, 2014
• Expiry date: Nov 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8164

Abstract

A device includes a wafer substrate having at least two isolation features, a buffer layer embedded between the two isolation features and a fin disposed over the buffer layer. The buffer layer includes a first lattice constant. The fin includes at least one pair of alternating layers having a compressive strained layer and a tensile strained layer such that the pair of alternating layer has a second lattice constant matching to the first lattice constant and remains strained at edge of the fin. The device further includes a gate disposed over the fin. The buffer layer, the compressive strained layer, and the tensile strained layer include element in Group III-V, or combination thereof. A thickness of the compressive strained layer or a thickness of the tensile strained layer is a function of the first lattice constant.