Semiconductor structure and circuit with embedded Schottky diode
US8823128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
A semiconductor structure is proposed. A third well is formed between a first well and a second well. A first doped region and a second doped region are formed in a surface of the third well. A third doped region is formed between the first doped region and the second doped region. A fourth doped region is formed in a surface of the first well. A fifth doped region is formed in a surface of the second well. A first base region and a second base region are respectively formed in surfaces of the first well and the second well. A first Schottky barrier is overlaid on a part of the first base region and the first doped region. A second Schottky barrier is overlaid on a part of the second base region and the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.