Patent · US Active

Process for cleaning wafers

US8828144B2 · kind B2 · utility

14Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 13, 2012
Grant dateSep 9, 2014
Priority date
Expiry dateJun 5, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02057
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.