Production of single-crystal semiconductor material using a nanostructure template
US8828849B2 · kind B2 · utility
5Cited by
27References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2008 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jun 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.