Chemical mechanical polishing of group III-nitride surfaces
US8828874B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 28, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02024
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.