Patent · US Active

Protection of reactive metal surfaces of semiconductor devices during shipping by providing an additional protection layer

US8828888B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Matthias Lehr · Dresden, DE
Joerg Hohage · Dresden, DE
Andreas Ott · Erfurt, DE

Key dates

Filing date	Mar 15, 2012
Grant date	Sep 9, 2014
Priority date	—
Expiry date	Oct 11, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1306
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may be efficiently re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.