Method for depositing cyclic thin film
US8828890B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.