Hybrid thin film transistor, manufacturing method thereof and display panel having the same

US8829511B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Hsiu-Chun Hsieh · Hsinchu, TW
• Yi-Wei Chen · Taichung, TW
• Ta-Wei Chiu · 埔鹽鄉, TW
• Chung-Tao Chen · Taipei, TW

Key dates

• Filing date: Sep 15, 2011
• Grant date: Sep 9, 2014
• Expiry date: Dec 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/471

Abstract

A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer.