Rare earth doped layer or substrate for light conversion
US8829546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2006 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.