Light emitting device package and fabrication method thereof
US8829548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/49107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.