Power semiconductor device and method for manufacturing such a power semiconductor device

US8829563B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Marco Bellini · Schlieren, CH
• Maxi Andenna · Fislisbach, CH
• Friedhelm Bauer · Suhr, CH
• Iulian Nistor · Niederweningen, CH

Key dates

• Filing date: Aug 23, 2013
• Grant date: Sep 9, 2014
• Expiry date: Aug 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.