Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US8829566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2007 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.