Ditches near semiconductor fins and methods for forming the same

US8829606B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Mark van Dal · Linden, BE

Key dates

• Filing date: Mar 15, 2013
• Grant date: Sep 9, 2014
• Expiry date: Mar 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211

Abstract

A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor strip is between and contacting the isolation regions. A semiconductor fin overlaps, and is joined to, the semiconductor strip. A ditch extends from a top surface of the isolation regions into the isolation regions, wherein the ditch adjoins the semiconductor fin.