ESD protection using diode-isolated gate-grounded NMOS with diode string

US8829618B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Ponnarith Pok · Plano, US
• Kyle Schulmeyer · Dallas, US
• Roger A. Cline · Plano, US
• Charvaka Duvvury · Plano, US

Key dates

• Filing date: Nov 3, 2011
• Grant date: Sep 9, 2014
• Expiry date: Dec 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device.