Image sensor with controllable vertically integrated photodetectors using a buried layer
US8829637B2 · kind B2 · utility
1Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jul 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/00
Abstract
An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.