Zener diode in a SiGe BiCMOS process and method of fabricating the same

US8829650B2 · kind B2 · utility

Assignee

• SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. · CN

Inventors

• Donghua Liu · Shanghai, CN
• Jun Hu · Shanghai, CN
• Wenting Duan · Shanghai, CN
• Wensheng Qian · Shanghai, CN
• Jing Shi · Beijing, CN

Key dates

• Filing date: Jan 4, 2013
• Grant date: Sep 9, 2014
• Expiry date: Jan 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/403

Abstract

A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed.